Structural characterization of Mn implanted AlInN
Identifieur interne : 001030 ( Chine/Analysis ); précédent : 001029; suivant : 001031Structural characterization of Mn implanted AlInN
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Abstract
AlInN/GaN thin films were implanted with Mn ions and subsequently annealed isochronically at 750 and 850 °C. X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques were employed to study the microstructural properties of the implanted/annealed samples. The effect of annealing on implantation-induced strain in thin films has been studied in detail. The strain was found to increase with dose until it reached a saturation value and after that it started decreasing with a further increase in the dose. RBS measurements indicated the atomic diffusion of In, Al, Ga and Mn in implanted samples. The in- and out-diffusion of atoms has been observed after annealing at 750 °C and 850 °C, respectively. Strong decomposition of the samples took place when annealed at 850 °C.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural characterization of Mn implanted AlInN</title><author><name sortKey="Majid, Abdul" uniqKey="Majid A">Abdul Majid</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advance Materials Physics Laboratory, Quaid-i-Azam University</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad</wicri:noRegion></affiliation></author><author><name sortKey="Ali, Akbar" uniqKey="Ali A">Akbar Ali</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advance Materials Physics Laboratory, Quaid-i-Azam University</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad</wicri:noRegion></affiliation></author><author><name sortKey="Zhu, J J" uniqKey="Zhu J">J. J. Zhu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences</s1><s2>Beijing 100083</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Wang, Y T" uniqKey="Wang Y">Y. T. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences</s1><s2>Beijing 100083</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0305795</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0305795 INIST</idno><idno type="RBID">Pascal:08-0305795</idno><idno type="wicri:Area/Main/Corpus">006867</idno><idno type="wicri:Area/Main/Repository">005D53</idno><idno type="wicri:Area/Chine/Extraction">001030</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-3727</idno><title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title><title level="j" type="main">Journal of physics. D, Applied physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Indium Nitrides Mixed</term><term>Annealing</term><term>Gallium nitride</term><term>Ion implantation</term><term>Manganese additions</term><term>Microstructure</term><term>RBS</term><term>Strained layer</term><term>Thin films</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Recuit</term><term>Diffraction RX</term><term>RBS</term><term>Microstructure</term><term>Implantation ion</term><term>Addition manganèse</term><term>Aluminium Indium Nitrure Mixte</term><term>Nitrure de gallium</term><term>Couche mince</term><term>Couche contrainte</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">AlInN/GaN thin films were implanted with Mn ions and subsequently annealed isochronically at 750 and 850 °C. X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques were employed to study the microstructural properties of the implanted/annealed samples. The effect of annealing on implantation-induced strain in thin films has been studied in detail. The strain was found to increase with dose until it reached a saturation value and after that it started decreasing with a further increase in the dose. RBS measurements indicated the atomic diffusion of In, Al, Ga and Mn in implanted samples. The in- and out-diffusion of atoms has been observed after annealing at 750 °C and 850 °C, respectively. Strong decomposition of the samples took place when annealed at 850 °C.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3727</s0></fA01><fA02 i1="01"><s0>JPAPBE</s0></fA02><fA03 i2="1"><s0>J. phys., D. Appl. phys. : (Print)</s0></fA03><fA05><s2>41</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structural characterization of Mn implanted AlInN</s1></fA08><fA11 i1="01" i2="1"><s1>MAJID (Abdul)</s1></fA11><fA11 i1="02" i2="1"><s1>ALI (Akbar)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHU (J. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>WANG (Y. T.)</s1></fA11><fA14 i1="01"><s1>Advance Materials Physics Laboratory, Quaid-i-Azam University</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences</s1><s2>Beijing 100083</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s2>115404.1-115404.6</s2></fA20><fA21><s1>2008</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>5841</s2><s5>354000200240150420</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0305795</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. D, Applied physics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>AlInN/GaN thin films were implanted with Mn ions and subsequently annealed isochronically at 750 and 850 °C. X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques were employed to study the microstructural properties of the implanted/annealed samples. The effect of annealing on implantation-induced strain in thin films has been studied in detail. The strain was found to increase with dose until it reached a saturation value and after that it started decreasing with a further increase in the dose. RBS measurements indicated the atomic diffusion of In, Al, Ga and Mn in implanted samples. The in- and out-diffusion of atoms has been observed after annealing at 750 °C and 850 °C, respectively. Strong decomposition of the samples took place when annealed at 850 °C.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Recuit</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Annealing</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>XRD</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>RBS</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>RBS</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Microstructure</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Microstructure</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Implantation ion</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Ion implantation</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Addition manganèse</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Manganese additions</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Aluminium Indium Nitrure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Aluminium Indium Nitrides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>15</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>15</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>15</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Couche mince</s0><s5>16</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Thin films</s0><s5>16</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Couche contrainte</s0><s5>17</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Strained layer</s0><s5>17</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Capa forzada</s0><s5>17</s5></fC03><fN21><s1>189</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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